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data sheet caution electro-static sensitive devices. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. not all devices/types available in every country. please check with local nec representative for availability and additional information. bipolar analog integrated circuit m m m m pc1679g 5 v-bias, +15.5 dbm output, 1.8 ghz wideband si mmic amplifier document no. p12434ej4v0ds00 (4th edition) date published september 1999 n cp(k) printed in japan data sheet 1994, 1999 the mark shows major revision points. description the m pc1679g is a silicon monolithic integrated circuit designed as medium output power amplifier for high frequency system applications. due to +13 dbm typ. output at 1 ghz, this ic is recommendable for transmitter stage amplifier of l band wireless communication systems. this ic is packaged in 8-pin plastic sop. this ic is manufactured using necs 20 ghz f t nesat tm iv silicon bipolar process. this process uses silicon nitride passivation film and gold electrodes. these materials can protect chip surface from external pollution and prevent corrosion/migration. thus, this ic has excellent performance, uniformity and reliability. features ? supply voltage : v cc = 4.5 to 5.5 v ? saturated output power : p o(sat) = +15.5 dbm typ. @ f = 500 mhz with external inductor ? wideband response : f u = 1.8 ghz typ. @ 3 db bandwidth ? isolation : isl = 34 db typ. @ f = 500 mhz ? power gain : g p = 21.5 db typ. @ f = 500 mhz ordering information part number package marking supplying form m pc1679g-e1 embossed tape 12 mm wide. 1 pin is tape pull-out direction. qty 2.5 kp/reel. m pc1679g-e2 8-pin plastic sop (225 mil) 1679 embossed tape 12 mm wide. 1 pin is tape roll-in direction. qty 2.5 kp/reel. remark to order evaluation samples, please contact your local nec sales office. (part number for sample order: m pc1679g)
data sheet p12434ej4v0ds00 2 m m m m pc1679g equivalent circuit pin connections 5 out 8 v cc in 1 67 34 2 1 (top view) input 2 gnd 3 gnd 4 gnd 8v cc 7 gnd 6 gnd 5 output absolute maximum ratings parameter symbol conditions rating unit supply voltage v cc t a = +25 c, pin 5, pin 8 6 v input power p in t a = +25 c +10 dbm power dissipation p d mounted on double copper clad 50 50 1.6 mm epoxy glass pwb (t a = +85 c) 360 mw operating ambient temperature t a - 45 to +85 c storage temperature t stg - 55 to +150 c recommended operating range parameter symbol min. typ. max. unit notice supply voltage v cc 4.5 5.0 5.5 v the same voltage should be applied to pin 5 and 8 operating ambient temperature t a - 45 +25 +85 c electrical characteristics (t a = +25 c, v cc = v out = 5.0 v, z s = z l = 50 w w w w ) parameter symbol conditions min. typ. max. unit circuit current i cc no signal 32 40 49 ma power gain g p f = 500 mhz 19.5 21.5 23.5 db noise figure nf f = 500 mhz - 6.0 8.0 db upper limit operating frequency f u 3 db down below the gain at 0.1 ghz 1.5 1.8 - ghz isolation isl f = 500 mhz 29 34 - db input return loss rl in f = 500 mhz 9 12 - db output return loss rl out f = 500 mhz 1 3 - db saturated output power p o(sat) f = 500 mhz, p in = +3 dbm +13.5 +15.5 - dbm
data sheet p12434ej4v0ds00 3 m m m m pc1679g test circuit in 1 800 pf 1 800 pf out 50 w l 1 800 pf v cc 2, 3, 4, 6, 7 l: 20.5 t, 2 mm i.d., 0.25 uew (about 300 nh) f 50 w c 1 c 2 1 8 5 c 3 inductor for the output pin the internal output transistor of this ic consumes 30 ma, to output medium power. to supply current for output transistor, connect an inductor between the v cc pin (pin 8) and output pin (pin 5). select large value inductance, as listed above. the inductor has both dc and ac effects. in terms of dc, the inductor biases the output transistor with minimum voltage drop to output enable high level. in terms of ac, the inductor make output-port impedance higher to get enough gain. in this case, large inductance and q is suitable. capacitors for the v cc , input and output pins capacitors of 1 800 pf are recommendable as the bypass capacitor for the v cc pin and the coupling capacitors for the input and output pins. the bypass capacitor connected to the v cc pin is used to minimize ground impedance of v cc pin. so, stable bias can be supplied against v cc fluctuation. the coupling capacitors, connected to the input and output pins, are used to cut the dc and minimize rf serial impedance. their capacitance are therefore selected as lower impedance against a 50 w load. the capacitors thus perform as high pass filters, suppressing low frequencies to dc. to obtain a flat gain from 100 mhz upwards, 1 800 pf capacitors are used in the test circuit. in the case of under 10 mhz operation, increase the value of coupling capacitor such as 10 000 pf. because the coupling capacitors are determined by equation, c = 1/(2 p rfc).
data sheet p12434ej4v0ds00 4 m m m m pc1679g typical characteristics (unless otherwise specified, t a = +25 c) no signal v cc = 5.0 v v cc = 5.0 v v cc = 5.0 v v cc = 5.0 v circuit current vs. supply voltage circuit current vs. operatating ambient temperature noise figure and insertion power gain vs. frequency circuit current i cc (ma) circuit current i cc (ma) insertion power gain g p (db) noise figure nf (db) supply voltage v cc (v) operating ambient temperature t a ( c) frequency f (ghz) 60 50 40 60 50 40 30 20 10 0 30 20 10 0 0123456 6040200+20+40+60+80 +100 25 20 15 10 5 0 9 8 7 6 5 4 3.0 1.0 0.3 0.1 0.03 0.01 insertion power gain vs. frequency insertion power gain g p (db) frequency f (ghz) 25 20 15 10 5 0 3.0 1.0 0.3 0.1 0.03 0.01 isolation vs. frequency isolation isl (db) frequency f (ghz) 0 ?0 ?0 ?0 ?0 ?0 3.0 1.0 0.3 0.1 0.03 0.01 input return loss and output return loss vs. frequency input return loss rl in (db) output return loss rl out (db) frequency f (ghz) +10 0 ?0 ?0 ?0 ?0 3.0 1.0 0.3 0.1 0.03 0.01 v cc = 5.5 v g p nf v cc = 5.0 v v cc = 5.5 v v cc = 5.0 v v cc = 4.5 v v cc = 4.5 v t a = +25 c t a = ?5 c t a = +85 c rl out rl in no signal
data sheet p12434ej4v0ds00 5 m m m m pc1679g f 1 = 500 mhz f 2 = 502 mhz p in = +3 dbm f = 500 mhz f = 500 mhz v cc = 5.0 v saturated output power vs. frequency third order intermodulation distortion vs. output power of each tone third order intermodulation distortion im 3 (dbc) saturated output power p o(sat) (dbm) frequency f (ghz) output power vs. input power ?0 ?5 ?0 ? 0 +5 +10 0 +5 +10 +15 +20 +25 0 +5 +10 +15 +20 +25 output power p out (dbm) input power p in (dbm) output power of each tone p o(each) (dbm) ?0 ?0 ?0 ?0 ?0 ?0 0 +25 +20 +15 +10 +5 0 +15 +10 +5 0 ? 3.0 1.0 0.3 0.1 0.03 0.01 output power vs. input power ?0 ?5 ?0 ? 0 +5 +10 output power p out (dbm) input power p in (dbm) v cc = 5.5 v v cc = 5.0 v v cc = 4.5 v v cc = 5.5 v v cc = 5.0 v v cc = 4.5 v v cc = 5.5 v v cc = 5.0 v v cc = 4.5 v t a = ?5 c t a = +85 c t a = +25 c
data sheet p12434ej4v0ds00 6 m m m m pc1679g s-parameter (t a = +25c, v cc = v out = 5.0 v) s 11 -frequency 3.0 g 1.0 g 0.1 g 2.0 g s 22 -frequency 3.0 g 2.0 g 1.0 g 0.5 g 0.1 g
data sheet p12434ej4v0ds00 7 m m m m pc1679g typical s-parameter values m pc1679g v cc = v out = 5.0 v, i cc = 40 ma frequency s 11 s 21 s 12 s 22 k mhz mag. ang. mag. ang. mag. ang. mag. ang. 100.0000 0.133 177.2 11.167 - 4.7 0.024 - 4.9 0.589 - 3.9 1.40 200.0000 0.154 171.2 11.585 - 9.8 0.022 - 10.3 0.620 - 9.7 1.41 300.0000 0.184 159.6 12.121 - 16.1 0.018 - 3.0 0.648 - 17.3 1.51 400.0000 0.217 147.3 12.690 - 23.9 0.015 4.9 0.669 - 25.9 1.63 500.0000 0.247 132.4 13.210 - 32.2 0.015 20.0 0.681 - 35.1 1.42 600.0000 0.279 117.7 13.509 - 40.9 0.017 35.5 0.680 - 44.3 1.15 700.0000 0.307 102.8 13.902 - 51.0 0.021 42.6 0.674 - 53.6 0.88 800.0000 0.333 88.3 13.966 - 59.8 0.026 44.8 0.659 - 62.0 0.71 900.0000 0.342 76.4 13.895 - 69.5 0.027 42.5 0.628 - 70.6 0.72 1000.0000 0.412 60.4 14.401 - 78.5 0.033 52.0 0.646 - 75.4 0.48 1100.0000 0.419 46.1 14.244 - 87.9 0.037 46.1 0.636 - 83.6 0.46 1200.0000 0.434 31.7 14.249 - 97.3 0.041 42.5 0.635 - 90.1 0.43 1300.0000 0.450 18.1 14.096 - 106.9 0.043 41.8 0.640 - 97.8 0.41 1400.0000 0.461 3.2 13.945 - 116.9 0.047 35.8 0.655 - 105.0 0.39 1500.0000 0.481 - 12.2 13.888 - 125.9 0.051 34.1 0.664 - 112.7 0.39 1600.0000 0.486 - 27.2 13.645 - 136.5 0.053 30.5 0.691 - 120.6 0.39 1700.0000 0.487 - 43.7 13.460 - 147.3 0.053 27.3 0.707 - 129.2 0.42 1800.0000 0.486 - 61.2 13.043 - 157.9 0.056 21.6 0.742 - 138.5 0.44 1900.0000 0.479 - 78.4 12.509 - 170.0 0.058 17.7 0.771 - 147.7 0.48 2000.0000 0.469 - 95.6 11.678 179.0 0.057 13.6 0.794 - 158.3 0.53 2100.0000 0.467 - 113.5 10.720 168.4 0.057 9.9 0.819 - 169.0 0.59 2200.0000 0.454 - 130.9 9.763 158.2 0.056 3.5 0.840 179.9 0.63 2300.0000 0.450 - 148.4 8.754 150.0 0.054 - 1.4 0.846 168.7 0.71 2400.0000 0.449 - 165.0 7.849 142.4 0.050 - 6.4 0.852 157.1 0.78 2500.0000 0.443 179.3 7.022 135.4 0.045 - 9.9 0.829 145.9 0.90 2600.0000 0.441 163.8 6.289 130.2 0.037 - 13.3 0.790 133.6 1.11 2700.0000 0.430 149.9 5.800 126.1 0.029 - 11.1 0.733 124.7 1.49 2800.0000 0.426 139.0 5.277 121.8 0.027 - 1.1 0.697 117.2 1.75 2900.0000 0.429 128.2 5.108 116.7 0.027 6.1 0.672 110.0 1.84 3000.0000 0.432 118.6 4.894 114.0 0.025 15.9 0.635 103.2 2.02 3100.0000 0.419 110.7 4.541 107.4 0.028 31.2 0.598 98.0 2.05
data sheet p12434ej4v0ds00 8 m m m m pc1679g package dimensions 8 pin plastic sop (225 mil) (unit: mm) m c d f 85 1 4 m g e b p j k l ns detail of lead end item millimeters a b c e f g h i j 5.2 0.2 1.27 (t.p.) 1.57 0.2 1.49 6.5 0.3 0.85 max. 0.12 1.1 0.2 4.4 0.15 m 0.1 0.1 n p3 + 7 d 0.42 + 0.08 - 0.07 k 0.17 + 0.08 - 0.07 l 0.6 0.2 0.10 - 3 s h i a note each lead centerline is located within 0.12 mm of its true position (t.p.) at maximum material condition.
data sheet p12434ej4v0ds00 9 m m m m pc1679g note on correct use (1) observe precautions for handling because of electro-static sensitive devices. (2) form a ground pattern as widely as possible to minimize ground impedance (to prevent undesired oscillation). all the ground pins must be connected together with wide ground pattern to decrease impedance difference. (3) the bypass capacitor should be attached to v cc line. (4) the inductor must be attached between v cc and output pins. the inductance value should be determined in accordance with desired frequency. (5) the dc cut capacitor must be attached to input pin. recommended soldering conditions this product should be soldered under the following recommended conditions. for soldering methods and conditions other than those recommended below, contact your nec sales representative. soldering method soldering conditions recommended condition symbol infrared reflow package peak temperature: 235 c or below time: 30 seconds or less (at 210 c) count: 3, exposure limit: none note ir35-00-3 vps package peak temperature: 215 c or below time: 40 seconds or less (at 200 c) count: 3, exposure limit: none note vp15-00-3 wave soldering soldering bath temperature: 260 c or below time: 10 seconds or less count: 1, exposure limit: none note ws60-00-1 partial heating pin temperature: 300 c time: 3 seconds or less (per side of device) exposure limit: none note C note after opening the dry pack, keep it in a place below 25 c and 65 % rh for the allowable storage period. caution do not use different soldering methods together (except for partial heating). for details of recommended soldering conditions for surface mounting, refer to information document semiconductor device mounting technology manual (c10535e).
data sheet p12434ej4v0ds00 10 m m m m pc1679g [memo]
data sheet p12434ej4v0ds00 11 m m m m pc1679g [memo]
m m m m pc1679g nesat (nec silicon advanced technology) is a trademark of nec corporation. the information in this document is subject to change without notice. before using this document, please confirm that this is the latest version. ? no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. ? nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. ? descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. the incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. nec corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. ? while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. ? nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. m7 98. 8

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